@article{MAKHILLJEAS2018132016993,
    title = {InP-Based Gunn Diodes with Stable Depletion Layer for
W-Band Waveguide Oscillator Applications},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {13},
    number = {20},
    pages = {8574-8578},
    year = {2018},
    issn = {1816-949x},
    doi = {jeasci.2018.8574.8578},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2018.8574.8578},
    author = {Sung,Seok-Gyu and},
    keywords = {InP Gunn diode,stable depletion layer,W-band,waveguide,oscillator,output},
    abstract = {In this study, we demonstrated the InP-based Gunn diode for W-band waveguide oscillator application. The fabricated InP-based Gunn diode has a Stable Depletion Layer (SDL) nn<sup>+</sup> structure for low operating currents, high output power and high dc-to-RF conversion efficiency. The 94 GHz waveguide oscillator was also developed in order to demonstrate the RF characteristics of the packaged InP-based Gunn diode. When the anode diameter of InP-based Gunn diode was 60 &mu;m, typical values of oscillation frequency and output power were 94.25 GHz and 16.11 dBm with a dc-to-RF conversion efficiency of 1.6%, respectively, at dc bias of 9 V. The highest output power of 19.1 dBm was obtained with a dc-to-RF conversion efficiency of 2.5% at dc bias of 11 V. The measured phase noise was &lt;-102.9 dBc/Hz at 1 MHz offset with 10 kHz of resolution bandwidth.}
    }