TY  - JOUR
T1  - Non-equilibrium electron-lattice heating and enhanced free carrier concentrations in nanosecond co<SUB>2 </SUB>laser pumped semi-conducting gaas thin film.
AU - , D. K. De AU - , E. F. Musongong 
JO  - Journal of Engineering and Applied Sciences
VL  - 2
IS  - 3
SP  - 637
EP  - 647
PY  - 2007
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2007.637.647
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2007.637.647
KW  - Carrier concentration
KW  -average transient hot electrons
KW  -thickness of film
KW  -different intensities
KW  -specific heat
KW  -gallium-arsenide thin films
AB  - In this paper, we have theoretically investigated the non-equilibrium electron-lattice heating in intrinsic Gallium-Arsenide thin film for various thicknesses, irradiated by few nanoseconds pulsed Carbon dioxide (CO<SUB>2</SUB>) laser for various intensities incident normally on a thin film. It is shown by our numerical simulations that there is significant difference between the average transient hot electron temperature <IMG SRC=`http://medwelljournals.com/Image42.gif`>  and the average lattice temperature <IMG SRC=http://medwelljournals.com/Image43.gif> of ~3000 K for a time scale considerably greater than the duration of the laser pulse, which gives rise to significantly enhanced free carrier concentration in the conduction band of the semiconductor. The possibility of enhanced photoemission of transient hot electron bunches from such laser pumped semi-conducting thin film by using a suitable delayed probe laser is discussed and proposed experimental set up.
ER  -