TY  - JOUR
T1  - Effects of Two-Step Deposition on Current Transport in Al-Ge-Au Sandwich Structures
AU - Odunaike, R.K. AU - Oberafo, A.A. AU - Zebaze Kana, M.G. 
JO  - Journal of Engineering and Applied Sciences
VL  - 5
IS  - 4
SP  - 327
EP  - 331
PY  - 2010
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2010.327.331
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2010.327.331
KW  - Al-Ge-Au structures
KW  -specific resistance
KW  -amorphous Ge
KW  -Current transport
KW  -Ge thin film
KW  -Nigeria
AB  - Investigations have been carried out at temperatures between 123 and 300 K on as deposited, vacuum evaporated Al-Ge-Au sandwich structure samples fabricated on Al support discs. The sandwiched, evaporated Ge layers were vacuum-deposited in either one or two steps and of various thicknesses while the Al and Au contacts on either side were each vacuum-deposited in one step. Furthermore for the two-step Ge depositions, the first Ge layer was exposed to air at room temperature for an hour before the second layer was deposited. All the samples showed good ohmic behaviour. The specific resistance (R<SUB>s</SUB>) of the Al-Ge-Au layers increased as the thickness of the sandwiched Ge layer increased but decreased as the temperature increased. The dependence of R<SUB>s</SUB> on the temperature indicated semiconducting behaviour in the Ge layer. It was also found that for a given overall thickness, R<SUB>s</SUB> increased as the number of steps increased while there was no significant change in R<SUB>s</SUB> for samples of same overall Ge thickness deposited in the same number of steps.
ER  -