TY  - JOUR
T1  - Analytical Model for the High Performance Si Channel N-MOS Process
AU - Jenopaul, P. AU - Sreedevi, M. 
JO  - Journal of Engineering and Applied Sciences
VL  - 6
IS  - 3
SP  - 210
EP  - 215
PY  - 2011
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2011.210.215
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2011.210.215
KW  - DIBL
KW  -Si channel n-MOS
KW  -high-k dielectrics
KW  -threshold voltage
KW  -subthreshold slope
KW  -India
AB  - A simple analytical expression for the 2D potential distribution in the Si channel n-MOS has been derived in the weak inversion regime. The analytical model includes the effect of short channel length, the influence of source to drain field on the substrate depletion depth through Voltage Doping Transformation (VDT), high-k dielectrics, interface trap charge density (Dit), gate work function and other device parameters. The analytical solution of the surface potential has been verified by the numerical solution of 2D Poisson&#146;s equation for two different values, the drain to source voltage V<SUB>DS</SUB> with close agreement. Based on this model, the expression for threshold voltage V<SUB>TH</SUB>, drain induced barrier lowering DIBL and the subthreshold slope S have been deduced. This model predictions show satisfactory agreement with the 2D numerical simulation results obtained by using MEDICI and also with reported experimental data. Further applying the model, threshold voltage and subthreshold slope have been comprehensively investigated.
ER  -