N. Moussaoui  , M. Bouafia  , Dj. Boubetra  , 
    Characterization of Radiation Damage by Deposition of GaN on GaAs,
    Journal of Engineering and Applied Sciences,
    Volume 2,Issue 9,
    2007,
    Pages 1440-1442,
    ISSN 1816-949x,
    jeasci.2007.1440.1442,
    (https://makhillpublications.co/view-article.php?doi=jeasci.2007.1440.1442)
    Abstract: Radiation damage by reactive magnetron sputtering deposition at low energies is connected with marked changes of optical constants of semiconductors. It will be shown, that  using ellipsometry and a special model can provide informations about relevant parameter of the  amorphization process of GaN/GaAS layer System. The procedure allows the quantification of the radiation damage in the nanometer range and the refractive index of the formed amorphous GaAs.
    Keywords: Physical radiation effects;ions;argon ions;ellipsometry;semiconductors;gallium arsenide;gallium nitride;amorphization