Z. Elateche  , A. Nouiri  , 
    Study of the Electron-Matter Interaction (Silicon Case),
    Journal of Engineering and Applied Sciences,
    Volume 2,Issue 4,
    2007,
    Pages 788-791,
    ISSN 1816-949x,
    jeasci.2007.788.791,
    (https://makhillpublications.co/view-article.php?doi=jeasci.2007.788.791)
    Abstract: The characterization of semiconductors by a Scanning Electron Microscopy (SEM) using techniques like Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) is great interest. Nowadays Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length by electron-matter interaction. In this research, we propose a new Monte Carlo calculation of electron depth and energy dissipation in silicon.
    Keywords: EBIC;minority carrier;diffusion length;calculation;Si