G. Ramana  Murthy, Ajay Kumar  Singh, J.  Hossen, P.  Velrajkumar, 
    Performance Analysis of Electrical Characteristics for Short Channel Effects
(SCE) in Carbon Nano Tube Field Effect Transistor (CNTFET) Devices,
    Journal of Engineering and Applied Sciences,
    Volume 12,Issue 20,
    2017,
    Pages 5116-5120,
    ISSN 1816-949x,
    jeasci.2017.5116.5120,
    (https://makhillpublications.co/view-article.php?doi=jeasci.2017.5116.5120)
    Abstract: This study presents the study of electrical characteristics performance of Carbon Nanotube Field
Effect Transistor (CNTFET) devices in terms of modulated channel potential, surface potential, threshold
voltage, threshold voltage roll-off and Drain Induced Barrier Voltage (DIBL) effect. From the study, it is evident
that the modulated channel potential generally falls with drain voltage. The fall becomes steeper for higher
intrinsic carrier concentration. Surface potential is suppressed with the channel for larger oxide thickness.
Threshold voltage rises sharply when the channel length reduces below 6 nm whereas threshold voltage roll-off
is severe for lower oxide thickness. DIBL effect is more predominant for nano-scale devices and becomes severe
for larger oxide thickness due to poor coupling between the channel and the gate.
    Keywords: CNTFET;modulated channel potential;surface potential;threshold voltage roll-off;DIBL;evident