Sung  Chan Kim, Seok-Gyu  Choi, Won-Young  Uhm, 
    InP-Based Gunn Diodes with Stable Depletion Layer for
W-Band Waveguide Oscillator Applications,
    Journal of Engineering and Applied Sciences,
    Volume 13,Issue 20,
    2018,
    Pages 8574-8578,
    ISSN 1816-949x,
    jeasci.2018.8574.8578,
    (https://makhillpublications.co/view-article.php?doi=jeasci.2018.8574.8578)
    Abstract: In this study, we demonstrated the InP-based Gunn diode for W-band waveguide oscillator application. The fabricated InP-based Gunn diode has a Stable Depletion Layer (SDL) nn<sup>+</sup> structure for low operating currents, high output power and high dc-to-RF conversion efficiency. The 94 GHz waveguide oscillator was also developed in order to demonstrate the RF characteristics of the packaged InP-based Gunn diode. When the anode diameter of InP-based Gunn diode was 60 &mu;m, typical values of oscillation frequency and output power were 94.25 GHz and 16.11 dBm with a dc-to-RF conversion efficiency of 1.6%, respectively, at dc bias of 9 V. The highest output power of 19.1 dBm was obtained with a dc-to-RF conversion efficiency of 2.5% at dc bias of 11 V. The measured phase noise was &lt;-102.9 dBc/Hz at 1 MHz offset with 10 kHz of resolution bandwidth.
    Keywords: InP Gunn diode;stable depletion layer;W-band;waveguide;oscillator;output