TY  - JOUR
T1  - Growth of GaAsSb Thin Film by Vertical-MOCVD and their Characterization
AU - Suhandi, Andi AU - Arifin, Pepen AU - Tayubi, Yuyu R. 
JO  - Journal of Engineering and Applied Sciences
VL  - 11
IS  - 12
SP  - 2788
EP  - 2793
PY  - 2016
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2016.2788.2793
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2016.2788.2793
KW  - Vertical-MOCVD
KW  -TDMAAs
KW  -TDMASb
KW  -GaAsSb
KW  -growth
AB  - The GaAs<sub>1-x</sub>Sb<sub>x</sub> (GaAsSb) ternary alloy has been studied intensively as the candidates for 1-x x
long-wavelength optoelectronic devices such as infrared laser diode and photo detector. The immiscible
compositional range in forming GaAsSb ternary alloy through substitution process is very wide. To grow a
ternary alloy that have a wide range of compositional miscibility like GaAsSb needed the thermally
non-equilibrium growth methods. Metalorganic Chemical Vapor Deposition (MOCVD) is one of the
semiconductor thin film growth technique can be use to meet those requirements. One problem faced in growing
GaAsSb thin films by MOCVD is the high carbon contamination in the grown films derived from metalorganic
sources in the form of methyl compound. The high carbon contamination will degrade the electrical properties
of grown films. On the metalorganic sources in the form of Trisdimethylamino compound such as Trisdimethyl
Amino Arsenic (TDMAAs) and Trisdimethyl Amino Antimony (TDMASb), the bond between As/Sb atom and
C atom in their chemical bonding structure buffered by N atom, so that incorporation of C atom into grown films
can be reduced. In addition, these metalorganic sources has a low decomposition temperature, approximately
340&deg;C and convenient vapor pressure for MOCVD growth. Generally semiconductor thin films grown on a
relatively low temperature will have a good quality of morphology and physical properties. In this research, the
MOCVD growth of metastable GaAsSb ternary alloy thin films using TMGa, TDMAAs and TDMASb has been
done. This study describes the crystal structure, surface morphology and optical properties of GaAsSb thin
films grown by Vertical-MOCVD.
ER  -