TY  - JOUR
T1  - Design, Optimization and Simulation of III-Nitride Power Heterostructure
Field Effect Transistor
AU - Manasreh, Adnan 
JO  - Journal of Engineering and Applied Sciences
VL  - 15
IS  - 6
SP  - 1558
EP  - 1563
PY  - 2020
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2020.1558.1563
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2020.1558.1563
KW  - MATLAB
KW  -Field Effect Transistors (FET)
KW  -ohmic contacts
KW  -metal stack
KW  -convergence
AB  - An enhanced design for a GaN/AlGaN HFET is proposed in this study, the proposed design is the
multi-layered metal stack design of a HFET using the metals and thicknesses of Ti (250Ă)-Al (750Ă)-Ti
(100Ă)-Al (750Ă)-Ti (100Ă)-Au (250Ă). This novel design has been proposed before and is an enhancement
of the traditional Ti-Al-Ti-Au. The aim of the prosed design was to obtain better ohmic contact performance
with the Ti-Al and multi-layering being the difference between the two. The two HFETs are expected to
perform differently with the proposed design showing better ohmic metalization, consistent with past results
and which have been proven using MATLAB simulation of its performance. The Ti-Al multi-layer metal stack
returned a resistance value of 3.23 Ωmm while the traditional model had values of 3.40 Ωmm. The proposed
Ti-Al multi-layer model also had better performance in terms of current densities with a value of 0.12 Amm<sup>&#150;1</sup>
compared to the traditional design that had 0.08 Amm<sup>&#150;1</sup>. Al mole fraction was observed to have a direct effect
on leakage performance, leakage being an important performance factor. The MATLAB results showed
convergence, falling within the 1&times;10<sup>&#150;10</sup> and 1&times;10<sup>&#150;6</sup>. The results were also comparable to those from past
research.
ER  -