Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
The nanostructure silicon known as Porous Silicon (PSi) was prepared by the technique of electrochemical etching of crystalline silicon doped boron (p-type) with orientation (100) by using Teflon cell, HF with 40% concentration and Methanol with purity (99.9%) in (1:2) ratio at 9 mA/cm2 current density and 13 min etching time. Ag nanoparticles was prepared by chemical reduction method. The structural, optical and electrical properties was investigated by using X-Ray Diffraction (XRD) Scanning Electron Microscope (SEM) Fourier Transform Infrared Spectroscopy (FTIR) and UV-visible spectrum. The electrical properties of Ag/PSi/c-Si/Al junction was studied by using dark I-V, illuminated I-V, C-V measurement and responsivity. The current study showed improvement in the electrical properties PSi photodetector after embedding AgNPs.
How to cite this article:
Warood Kream Alaarage. Improved Electrical Properties of PSi Photodetector by Embedding Ag.
DOI: https://doi.org/10.36478/jeasci.2018.8081.8085
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2018.8081.8085