International Journal of Electrical and Power Engineering
ISSN: Online 1993-6001ISSN: Print 1990-7958
Abstract
Based on the phenomena of displacement of the majority carriers in silicon and based on the assumption that each piezoresistor of a silicon pressur sensor has its own temperature coefficients (TCRs of the first and second order), this study gives an explanation on the existence of the offset volage in the piezoresitif pressure sensors and its thermal behaviour. Using different models of majority carriers mobility in silicon, this study presents a new formula for the first and the second temperature coefficient and in function of doping concentration N (cm 3).On the other hand, this new presentation enable us to present the thermal behaviour of piezoresistive pressure sensors in function of 2 parameters namely the doping concentration N (cm 3) and temperature T (°C) then we report the effect of the temperature on the offset voltage.
How to cite this article:
M. Ras Lain , A. Chaabi and D. Dibi . Modelling and Simulation of the Thermal Behaviour of the Offset Voltage of Piezoresistive Pressure Sensors.
DOI: https://doi.org/10.36478/ijepe.2007.295.299
URL: https://www.makhillpublications.co/view-article/1990-7958/ijepe.2007.295.299