Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
In this study, we have used the silicon wafers. Before the deposit of film, the oxide layer has been removed by chemical cleaning. After, the thickness of 80 nm molybdenum layer has been deposited by electronic bombardment. The samples were heat treated at temperatures ranging from 500 to 700°C for different time duration under vacuum. We report here on the electrical characterization of the interdiffused and reacted Molybdenum-Silicon bilayered system by means of sheet resistivity measurements using four point probes. X-ray diffractometry were taken, in order to observe the formation of phases that occur at annealing conditions which cause drastic modifications in the sheet resistivity values.
How to cite this article:
Houria Benkherbache and Abdelali Merabet . Interdiffusion and Compound Formation in the Mo/Si Thin Film Metallization System.
DOI: https://doi.org/10.36478/jeasci.2007.854.858
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2007.854.858