Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
The threshold roll-off is a vital phenomena to be considered for any low-power and small-scale circuit design. With the advancement of the fabrication processes the channel length of the transistors is reducing rapidly, this reduction in the channel length affects the threshold voltage of the transistors very severely. To evaluate the effect of channel reduction on the threshold voltage this study analyzes the threshold roll-off by taking SRAM cell into consideration. The reason behind choosing SRAM cell is that now the IC’s are fabricated using System on Chip (SOC) design technique and currently approximately 70-80% of the SOC area are covered by memories only. One of the most important figure of merit for SRAM cell is its Static Noise Margin (SNM) and hence, the effect of threshold-roll is implemented with respect to SNM of the SRAM cell.
How to cite this article:
P.R. Vaya, Sunil Kumar Ojha, G.R. Mishra and O.P. Singh. Effect of Threshold Roll-Off on Static Noise Margin of Sram Cell.
DOI: https://doi.org/10.36478/jeasci.2018.5801.5806
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2018.5801.5806