Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
An enhanced design for a GaN/AlGaN HFET is proposed in this study, the proposed design is the multi-layered metal stack design of a HFET using the metals and thicknesses of Ti (250Ă)-Al (750Ă)-Ti (100Ă)-Al (750Ă)-Ti (100Ă)-Au (250Ă). This novel design has been proposed before and is an enhancement of the traditional Ti-Al-Ti-Au. The aim of the prosed design was to obtain better ohmic contact performance with the Ti-Al and multi-layering being the difference between the two. The two HFETs are expected to perform differently with the proposed design showing better ohmic metalization, consistent with past results and which have been proven using MATLAB simulation of its performance. The Ti-Al multi-layer metal stack returned a resistance value of 3.23 Ωmm while the traditional model had values of 3.40 Ωmm. The proposed Ti-Al multi-layer model also had better performance in terms of current densities with a value of 0.12 Amm–1 compared to the traditional design that had 0.08 Amm–1. Al mole fraction was observed to have a direct effect on leakage performance, leakage being an important performance factor. The MATLAB results showed convergence, falling within the 1×10–10 and 1×10–6. The results were also comparable to those from past research.
How to cite this article:
Adnan Manasreh. Design, Optimization and Simulation of III-Nitride Power Heterostructure
Field Effect Transistor.
DOI: https://doi.org/10.36478/jeasci.2020.1558.1563
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2020.1558.1563