Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
Radiation damage by reactive magnetron sputtering deposition at low energies is connected with marked changes of optical constants of semiconductors. It will be shown, that using ellipsometry and a special model can provide informations about relevant parameter of the amorphization process of GaN/GaAS layer System. The procedure allows the quantification of the radiation damage in the nanometer range and the refractive index of the formed amorphous GaAs.
How to cite this article:
N. Moussaoui , M. Bouafia and Dj. Boubetra . Characterization of Radiation Damage by Deposition of GaN on GaAs.
DOI: https://doi.org/10.36478/jeasci.2007.1440.1442
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2007.1440.1442