Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
In this paper, we have theoretically investigated the non-equilibrium electron-lattice heating in intrinsic Gallium-Arsenide thin film for various thicknesses, irradiated by few nanoseconds pulsed Carbon dioxide (CO2) laser for various intensities incident normally on a thin film. It is shown by our numerical simulations that there is significant difference between the average transient hot electron temperature 
and the average lattice temperature 
of ~3000 K for a time scale considerably greater than the duration of the laser pulse, which gives rise to significantly enhanced free carrier concentration in the conduction band of the semiconductor. The possibility of enhanced photoemission of transient hot electron bunches from such laser pumped semi-conducting thin film by using a suitable delayed probe laser is discussed and proposed experimental set up.
How to cite this article:
D. K. De and E. F. Musongong . Non-equilibrium electron-lattice heating and enhanced free carrier concentrations in nanosecond co2 laser pumped semi-conducting gaas thin film..
DOI: https://doi.org/10.36478/jeasci.2007.637.647
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2007.637.647