Journal of Engineering and Applied Sciences

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Study of the Electron-Matter Interaction (Silicon Case)

Z. Elateche and A. Nouiri
Page: 788-791 | Received 21 Sep 2022, Published online: 21 Sep 2022

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Abstract

The characterization of semiconductors by a Scanning Electron Microscopy (SEM) using techniques like Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) is great interest. Nowadays Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length by electron-matter interaction. In this research, we propose a new Monte Carlo calculation of electron depth and energy dissipation in silicon.

How to cite this article:

Z. Elateche and A. Nouiri . Study of the Electron-Matter Interaction (Silicon Case).
DOI: https://doi.org/10.36478/jeasci.2007.788.791
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2007.788.791