Journal of Engineering and Applied Sciences
ISSN: Online 1818-7803ISSN: Print 1816-949x
Abstract
In this study, we demonstrated the InP-based Gunn diode for W-band waveguide oscillator application. The fabricated InP-based Gunn diode has a Stable Depletion Layer (SDL) nn+ structure for low operating currents, high output power and high dc-to-RF conversion efficiency. The 94 GHz waveguide oscillator was also developed in order to demonstrate the RF characteristics of the packaged InP-based Gunn diode. When the anode diameter of InP-based Gunn diode was 60 μm, typical values of oscillation frequency and output power were 94.25 GHz and 16.11 dBm with a dc-to-RF conversion efficiency of 1.6%, respectively, at dc bias of 9 V. The highest output power of 19.1 dBm was obtained with a dc-to-RF conversion efficiency of 2.5% at dc bias of 11 V. The measured phase noise was <-102.9 dBc/Hz at 1 MHz offset with 10 kHz of resolution bandwidth.
How to cite this article:
Seok-Gyu Choi, Won-Young Uhm and Sung Chan Kim. InP-Based Gunn Diodes with Stable Depletion Layer for
W-Band Waveguide Oscillator Applications.
DOI: https://doi.org/10.36478/jeasci.2018.8574.8578
URL: https://www.makhillpublications.co/view-article/1816-949x/jeasci.2018.8574.8578